PART |
Description |
Maker |
AM27C512-15F6 AM27C512-120PC AM27C512-70DI ADVANCE |
64K X 8 UVPROM, 120 ns, CDIP28 64K X 8 OTPROM, 90 ns, PDIP28 64K X 8 UVPROM, 55 ns, CDIP28 64K X 8 UVPROM, 90 ns, CDIP28 64K X 8 UVPROM, 70 ns, CDIP28 IC 集成电路 512 Kilobit (64 K x 8-Bit) CMOS EPROM
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ADVANCED MICRO DEVICES INC SPANSION LLC Rochester Electronics, LLC AMD
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IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44 2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位) P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
MCM67A618 MCM67A618FN10 MCM67A618FN12 MCM67A618FN1 |
64K x 18 Bit Asychronous/Latched Address Fast Static RAM 64K X 18 CACHE TAG SRAM, 10 ns, PQCC52
|
Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola, Inc]
|
KM616FR1000 |
64K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低电压CMOS 静态RAM) 64K的x16位超低功耗和低电压的CMOS全静态RAM4K的16位超低功耗低电压的CMOS静态RAM)的
|
Samsung Semiconductor Co., Ltd.
|
FM27C512Q FM27C512N90 FM27C512V120 FM27C512V150 FM |
512K-Bit (64K x 8) High Performance CMOS EPROM 524,288-Bit (64K x 8) High Performance CMOS EPROM 524/288-Bit (64K x 8) High Performance CMOS EPROM Capacitors.. 100 PIECE MIN.. NC/NR
|
FAIRCHILD[Fairchild Semiconductor] PROM
|
CY7C1332 CY7C1331 7C1331 |
64K x 18 Synchronous Cache 3.3V RAM(3.3V 64K x 18 同步高速缓冲存储器 RAM) 64K的18同步高速缓.3V的内存电压(3.3V 64K的18同步高速缓冲存储器的RAM From old datasheet system 64K x 18 SynchronousCache 3.3V RAM
|
Cypress Semiconductor Corp.
|
AT29C1024-70 AT29C1024-15 AT29C1024-12TC AT29C1024 |
8-Bit Shift Registers With 3-State Output Registers 16-SOIC -55 to 125 8-Bit Shift Registers With 3-State Output Registers 16-SSOP -55 to 125 1 Megabit 64K x 16 5-volt Only CMOS Flash Memory 1兆位64K的16 5伏只有闪存的CMOS 1 Megabit 64K x 16 5-volt Only CMOS Flash Memory 64K X 16 FLASH 5V PROM, 70 ns, PQCC44
|
Atmel Corp. Atmel, Corp. Electronic Theatre Controls, Inc.
|
W27C520S-70 W27C520 W27C520W-90 W27C520S-90 W27C52 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20 BOX 2.53X1.73X.65 W/4 BTNS ALMOND 64K X 8 EEPROM 3V, 90 ns, PDSO20 From old datasheet system
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Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
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GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100 117MHz 11ns 64K x 32 2M synchronous burst SRAM 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
AT49LV1024A AT49LV1024A-45VC AT49LV1024A-45VL |
1M bit, 64K x 16, 3-Volt Read and 3-Volt Write Flash 1-megabit (64K x 16) 3-volt Only Flash Memory
|
ATMEL[ATMEL Corporation]
|
IS25C64A-3ZLA1 IS25C32A IS25C32A_07 IS25C32A-2GI I |
32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI[Integrated Silicon Solution, Inc]
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